The Fuji 2MBI300VB-060-50 is a robust IGBT (Insulated Gate Bipolar Transistor) module specifically designed for high power switching applications. Here are the detailed specifications of this module:
- Maximum Continuous Collector Current: 300 A
- Maximum Collector Emitter Voltage: 600 V
- Maximum Gate Emitter Voltage: ±20 V
- Channel Type: N-channel
- Mounting Type: Surface Mount
- Package Type: M274
- Pin Count: 7
- Maximum Power Dissipation: 1.36 kW
- Dimensions: 92 x 45 x 30 mm (Length x Width x Height)
- Operating Temperature Range: Up to +150°C
Features:
- IGBT Technology: Utilizes Insulated Gate Bipolar Transistor technology, providing high switching speeds, low on-state losses, and high blocking voltages.
- Built-in Protection: Equipped with built-in protection features such as overcurrent protection and thermal shutdown, enhancing the module’s reliability and safety.
- Common Applications: Typically used in applications requiring high power switching, such as motor drives, power supplies, and inverters.