The Fuji 6MBP150RA060-02 is an IGBT (Insulated Gate Bipolar Transistor) module with specific features and maximum ratings. Here’s a breakdown of its key specifications:
Features:
- Temperature Protection: The module provides temperature protection by directly detecting the junction temperature of the IGBTs. This feature ensures that the device operates within a safe temperature range.
- Low Power Loss and Soft Switching: The module is designed for low power loss and soft switching, improving efficiency and reducing stress on the components.
- High Performance and Reliability: It features high-performance and high-reliability IGBTs with power heating protection, ensuring stable and efficient operation.
- Simplified Control Circuit: The module has higher reliability due to a reduction in the number of parts in the built-in control circuit, simplifying the overall design.
Maximum Ratings (Tc=25°C unless specified otherwise):
- Collector-Emitter Voltage (Vces): 600V
- Gate-Emitter Voltage (VGES): ±20V
- Continuous Collector Current (Ic): 150A
- Collector Current (Icp 1ms): 300A (for 1 millisecond duration)
- Collector Power Dissipation (Pc): 595W
- Isolation Voltage (VIso): 2500V AC for 1 minute
- Operating Junction Temperature (Tj): Up to +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: M5 screw with a torque of 3.5 * 6 N·m
This IGBT module is suitable for high-power applications where efficient switching and temperature management are essential.