The Fuji 6MBP100KB060 IGBT (Insulated Gate Bipolar Transistor) module. It is designed for high-power applications, including industrial drives, power supplies, renewable energy systems, and motor control.
Here are some key specifications for the 6MBP100KB060 IGBT module:
voltage Rating:
Collector-emitter voltage (Vce): 600V
Gate-emitter voltage (Vge): ±20V
Current Rating:
Collector current (IC): 100A
Collector current (peak) (Icp): 200A
Collector current (continuous) (IC cont): 100A
Power Ratings:
Maximum power dissipation (Pd): 520W
Maximum power dissipation (peak) (Pdp): 1300W
Switching Characteristics:
Switching frequency (fsw): Up to several kHz
Turn-on time (ton): Typically in the range of tens of nanoseconds
Turn-off time (toff): Typically in the range of hundreds of nanoseconds
Thermal Specifications:
Thermal resistance (Rth): Typically in the range of a few degrees Celsius per watt (°C/W)
Maximum junction temperature (Tj max): 150°C