The Fuji 7MBP100NA060-01 is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications:
Manufacturer Part Number: 7MBP100NA060-01
Package Description: Flange Mount, R-PUFM-X22
Manufacturer: Fuji Electric Co Ltd
Additional Feature: High Reliability
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 600 V
Configuration: Complex
JESD-30 Code: R-PUFM-X22
Number of Elements: 7
Number of Terminals: 22
Operating Temperature-Max: 150 °C
Package Body Material: Plastic/Epoxy
Package Shape: Rectangular
Package Style: Flange Mount
Polarity/Channel Type: N-Channel
Subcategory: Insulated Gate Bipolar Transistors
Surface Mount: No
Terminal Position: Upper
Transistor Element Material: Silicon
Turn-off Time-Nom (toff): 3600 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 2.9 V
This IGBT module is designed for applications requiring high reliability and features a complex configuration. It has a maximum collector current of 100 A and a maximum collector-emitter voltage of 600 V. The module’s package is designed for flange mounting and has a total of 22 terminals.
The IGBT is an N-channel device and is part of the Insulated Gate Bipolar Transistor category. It is made of silicon, and its turn-on and turn-off times are 300 ns and 3600 ns, respectively. The maximum saturation voltage (VCEsat) is 2.9 V.