The IXYS VUB145-16NOXT is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for various power electronic applications. Here is an overview of its features, specifications, and characteristics:
Features and Advantages:
- Packaged with DCB ceramic.
- Improved temperature and power cycling performance.
- Utilizes planar passivated chips.
- Very low forward voltage drop.
- Very low leakage current.
- NTC (Negative Temperature Coefficient) for temperature sensing.
- X2PT – 2nd generation Xtreme light Punch Through technology.
- Rugged X2PT design with short-circuit capability for 10 μsec.
- Low gate charge.
- Low electromagnetic interference (EMI).
- Square RBSOA (Reverse Bias Safe Operating Area) at 2x Ic (Collector Current).
- Thin wafer technology combined with X2PT design results in competitive low VCE(sat) (Collector-Emitter Saturation Voltage) and low thermal resistance.
Specifications:
- Manufacturer Part Number: VUB145-16NOXT
- Collector-Emitter Voltage (Vces): 1600V
- Gate-Emitter Voltage (VGES): ±20V
- Continuous Collector Current (Ic): 180A
- Collector Current (Icp) for pulse: 360A
- Collector Power Dissipation (Pc): 500W
- Maximum Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 3.5 N·m
Application Notes: The module is designed for high-performance applications such as motor drives, power supplies, and inverters. It features advanced IGBT technology that provides high efficiency and low power dissipation. The built-in over-temperature and over-current protection system helps prevent damage from overloads or short circuits.