FUJI 7MBP100NA060 In-Stock

#7MBP100NA060 FUJI 7MBP100NA060 New Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel, 7MBP100NA060 pictures, 7MBP100NA060 price, #7MBP100NA060 supplier
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Manufacturer Part Number: 7MBP100NA060
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Package Description: FLANGE MOUNT, R-PUFM-X22
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.84
Additional Feature: HIGH RELIABILITY
Collector Current-Max (IC): 100 A
Collector-Emitter voltage-Max: 600 V
Configuration: COMPLEX
JESD-30 Code: R-PUFM-X22
Number of Elements: 7
Number of Terminals: 22
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 3600 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 2.9 V
Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel