7MBP25RA120 IGBT-IPM R Series
Key Features:
- Temperature protection is incorporated, allowing direct detection of the IGBTs’ junction temperature.
- Minimized power loss and soft switching characteristics.
- Compatibility with existing IPM-N series packages.
- High-performance and highly reliable IGBT with built-in overheating protection.
- Enhanced reliability achieved by reducing the number of components in the integrated control circuit.
Maximum Ratings and Characteristics:
- Absolute Maximum Ratings (Tc=25°C unless otherwise specified):
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 25A
- Collector Current Peak (Icp): 50A
- Collector Power Dissipation (Pc): 198W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Torque for M5 Screw: 3.5 Newton·meters
This Fuji IGBT module, the 7MBP25RA120-59, offers a range of features and impressive specifications, making it suitable for various applications in power electronics and control systems.