The Infineon BSM50GD120DN2 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications in various industries such as industrial drives, renewable energy systems, and traction applications. It features low switching losses, high efficiency, and excellent thermal performance.
Here are some key features and specifications of the Infineon BSM50GD120DN2 IGBT module:
- Collector-Emitter voltage: VCES = 1200V
- Collector Current: IC = 75A
- Maximum Collector Current: ICM = 150A
- Maximum Collector Dissipation: PC = 540W
- Maximum Junction Temperature: TJ = +150°C
- Low VCE(sat) voltage: Typically 1.6V at IC = 75A
- Low Switching Losses
- High Short-circuit Capability: 10µs, 3 x ICnom
- Integrated Temperature sensor
- Isolation Voltage: 2500V RMS, 1 min
- Module Weight: Approximately 70g
The BSM50GD120DN2 module offers a compact and robust design, making it suitable for demanding applications that require high-power switching capabilities and reliability. It is commonly used in motor drives, renewable energy inverters, UPS (Uninterruptible Power Supplies), and other power electronics systems.