The Infineon FF400R33KF2C is a high-power dual IGBT module designed for traction and industrial applications. Here are the specifications for the FF400R33KF2C IGBT module:
- Manufacturer: Infineon Technologies
- Product: IGBT Silicon Modules
- Configuration: Dual
- Collector-Emitter voltage VCEO Max: 3300 V
- Collector-Emitter Saturation voltage: 3.4 V
- Continuous Collector Current at 25°C: 660 A
- Gate-Emitter Leakage Current: 400 nA
- Pd – Power Dissipation: 4.8 kW
- Package / Case: IHM (Integrated Half-Bridge Module)
- Minimum Operating Temperature: -40°C
- Maximum Operating Temperature: +125°C
- Packaging: Tray
- Height: 38 mm
- Length: 140 mm
- Series: IGBT2
- Technology: Si (Silicon)
- Width: 130 mm
- Brand: Infineon Technologies
- Mounting Style: Chassis Mount
- Maximum Gate Emitter Voltage: 20 V
- Product Type: IGBT Modules
- Factory Pack Quantity: 2
- Subcategory: IGBTs
The FF400R33KF2C module offers a high voltage rating of 3300 V and a maximum collector current of 400 A. It features low collector-emitter saturation voltage, low gate-emitter leakage current, and high power dissipation capability. The module is designed for reliable and efficient operation in challenging environments.