The Infineon FZ1200R33KF2C IGBT module
Manufacturer: Infineon Technologies
Features:
4th generation High Power IGBT technology
High switching frequency capability
Low saturation voltage
Low loss and low noise operation
Isolated gate drive for improved noise immunity and robustness
Protection features for over-current, short-circuit, and temperature
Suitable for motor drives, power supplies, and industrial applications
Maximum Ratings and Characteristics (Tj = 25°C unless otherwise specified):
Collector-Emitter voltage (Vces): 3300V
Gate-Emitter Voltage (Vges): ±20V
Collector Current (IC): 1200A
Collector Current (Icp): 2400A
Collector Power Dissipation (Pc): 2400W
Collector-Emitter Voltage (Vce): 1800V
Operating Junction Temperature (Tj): -40°C to +150°C
Storage Temperature (Tstg): -40°C to +150°C
Mounting Screw Torque: 3.0 Nm