The Infineon FZ1500R33HE3 IGBT module:
Supply voltage VDC (VDC to GND):16 V
Average supply current IDC:
1SP0635x2M1(C) only: 400 mA
1SP0635x2M1(C) with three 1SP0635D2S1(C): 1130 mA
Gate output power:
1SP0635x2M1(C) Ta<70°C: 3 W
1SP0635x2M1(C) Ta=85°C: 2.2 W
1SP0635D2S1(C) Ta<70°C: 2.6 W
1SP0635D2S1(C) Ta=85°C: 2 W
Switching frequency f:
1SP0635x2M1(C) Ta<70°C: 2.9 kHz
1SP0635x2M1(C) Ta=85°C: 2.1 kHz
1SP0635D2S1(C) Ta<70°C: 2.5 kHz
1SP0635D2S1(C) Ta=85°C: 1.9 kHz
Gate peak current lout: Note 9: -35 A to +35 A
Test voltage (50Hz/1min.):
1SP0635x2M1(C) primary to secondary: 6000 VAC (eff)
DC-link voltage:
Switching operation (Note 11): 2200 V
Offstate (Note 12): 2700 V
Operating voltage:
Primary to secondary side: 3300 V peak
Max. emitter-emitter voltage:
Between parallel connected drivers (Note 13): 200 V peak
dV/dt:
Between parallel connected drivers (Note 14): 50 kV/µs
Max. interface current:
X2 and X3, total RMS value (Note 15): 4 Arms
X2 and X3, total peak value (Note 15): 20 A peak
Operating temperature: -40°C to 85°C
Storage temperature (Note 31):-40°C to 50°C
Surface temperature:
Only 1SP0635x2x1C-FZ1500R33HE3 (Note 32): 125°C