- Part Number: FZ400R12KE3
- Manufacturer: Infineon TECHNOLOGIES AG
- Package Type: FLANGE MOUNT, R-XUFM-X5
- Pin Count: 5
- ECCN Code: EAR99
- Status: Active
Electrical Specifications:
- Collector Current-Max (IC): 650 A
- Collector-Emitter Voltage-Max: 1200 V
- Gate-Emitter Voltage-Max: 20 V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs): 2250 W
Physical Characteristics:
- Package Shape: RECTANGULAR
- Package Style: FLANGE MOUNT
- Number of Terminals: 5
- Terminal Position: UPPER
- Case Connection: ISOLATED
Additional Details:
- Temperature Range: -40°C to 150°C
- Pbfree Code: Yes
- JESD-30 Code: R-XUFM-X5
- Subcategory: Insulated Gate BIP Transistors
Description:
Explore the high-performance capabilities of the Infineon FZ400R12KE3, an active N-Channel Insulated Gate Bipolar Transistor (IGBT) module with a collector current of 650 A and a collector-emitter voltage of 1200 V. This module is designed with a built-in diode for enhanced functionality. The flange mount, rectangular package with 5 terminals ensures ease of integration and reliability.
Applications:
- Power Electronics
- Motor Drives
- Inverters
Note: For technical specifications and datasheet, please refer to the official documentation provided by Infineon TECHNOLOGIES AG.