FSC NDS355N In-Stock

#NDS355N FSC NDS355N Novum NDS355N N-Cannal Logic Level Enhancement Modus Field Effectus Gallium 30V, 1.6A, 125mΩ, 3000-REEL; NDS355N , NDS355N pictures, NDS355N pretium, #NDS355N elit.
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Manufacturer Pars Number: NDS355N
Notam nomen: ON semiconductor
Pbfree Code: Active
Ihi Manufacturer: DE Gallium
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G3
Manufacturer Package Code: 527AG
ECCN Code: EAR99
HTS Code: 8541.21.00.95
Manufacturer: DE Gallium
Risk Rank: 0.94
Additional Feature: LOGICA COMPATIBILIS LIBELLA
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 1.6 A
Exhaurire-fonte Resistentia-Max: 0.085 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
N-Channel Logic Level Enhancement Mode Field Effectus Transistor 30V, 1.6A, 125mΩ, 3000-REEL