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Introducendis novum IGBT (Bipolar insulae portae Gallium) Module ex Infineon, the BSM75GD120DN2. Hic modulus provectus praebet notas graves et specificas pro variis applicationibus summus potentiae. Hic sunt singularia quaedam clavis de hoc modulo:
Exemplar: BSM75GD120DN2
Manufacturer: Infineon Technologies
IGBT OMNIBUS Type: Dual IGBT
Maximum Collector-Emitte voltage (Vces): De more 1200V
Maximum continuum Collector Current (IC) : De more 75A per IGBT
Maxime Pecco Collector Current (ICP): De more 300A per IGBT
Totalis Power dissipatio (Ptot): De more 700W per IGBT
Porta-Emitte voltage (VGES): ±20V
Operating Temperature; -40 150 ° C ad F +
Pondus: Proxime 150g *
Modulus Infineon BSM75GD120DN2 IGBT designatus est ad altam potentiam et altas applicationes venas tractandas. Constat ex IGBTs duali, magis flexibilitatem in permittens circuit consilio et potestate tractans. Modulus aptus est variis applicationibus industrialibus sicut motores activitatis, convertentium potentiae, systematum energiae renovandae.