IR IRF7329 In-Stock

#IRF7329 IR IRF7329 Novum IRF7329 Field signum parvum, Effectus Gallium, 9.2A I (D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Gallium FET, SO-8; IRF7329, IRF7329 pictures, IRF7329 pretium, #IRF7329 elit
-----------------------
Email: sales@shunlongwei.com

https://www.slw-ele.com/irf7329.html

-----------------------

Manufacturer Pars Number: IRF7329
Rohs Code: No
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: Infineon AG technologiae
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.77
Configurationis: SEPARATUS, 2 elementa inaedificata in Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 9.2 A
Exhaurire-fonte Resistentia-Max: 0.017 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G8
JESD-609 Codex: e0
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 245
Verticitatem / Channel Type: P-CHNAL
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: plumbum / plumbum (Sn / Pb)
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small Signum Campi-Effectus Transistor, 9.2AI(D), 12V, 2-Element, P-Channel, Silicon, oxydatum Metallum. Gallium FET, SO-8