Renault Vel features PM75CSE120:
a) Utitur novam 4th generationis plani IGBT chip cum aucta observantia per 1μm tenuis regulae processum.
b) Incorporat novam diodam destinatam ad notas receptas mollia consequendam.
Sales Email: sales@shunlongwei.com
Key Specifications:
- 3-phase, 75A, 1200V Sensus hodiernus IGBT apta 15kHz mutandi.
- Integra monolithic portae pellunt et tutelam logicae.
- Includes detection, protection, and the state indication circuits for over-current, short-circuitnimis temperatus et intellectusvoltage condiciones.
- Specimen pro tacitis 11/15kW applicationibus invertentibus classis.
Maximum Ratings et Characteres:
- Collector-Emitte voltage (Vces): 1200V
- Porta-Emitte intentione (VGES): ±20V
- Collector Current (IC) : 75A
- Collector Current (ICP): 150A
- Collector Power (Pc): 416W
- Collector-Emitte intentione (VCES): 2500V
- Temperature operans Junction (Tj): +150°C
- Repono Temperature (Tstg): -40 ad +125°C
- Commendatur Adscendens Screw Torque: M5, 2.5~3.5 N·m
- Pondus (Typical): 560g