Toshiba MG150Q2YS51 In-Stock

#MG150Q2YS51 Toshiba MG150Q2YS51 Nova MG150Q2YS51 Toshiba GTR Module Pii N Channel IGBT (1 PER), MG150Q2YS51 pictures, MG150Q2YS51 pretium, #MG150Q2YS51 elit.
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MG150Q2YS51 Descriptio

Princeps Power Switching Applications
Motor Imperium Applications
. Princeps initus impedimentum
. Magna celeritate : tf = 0.3µs (Max) @Inductive Load
.Low satietatem voltage : VCE (sedit) = 3.6V (Max)
.Enhancement-modus
.Includes a complete half bridge in one sarcina.
.The electrodes separatim sunt.
Collector-emissa intentione VCES 1200 V
Porta-voltage EDITOR VGES ± XX V
Collector current DC IC (25°C / 80°C) 200 / 150A .
Collector currentis 1ms ICP (25°C / 80°C) 400 / 300A
Transmittere current DC IF 150A
Deinceps current 1ms IFM 300A
Tj CL coniunctas temperatus F
Repono temperatura range Tstg −40 ~ 125 °C
Solitudo voltage VIsol 2500 (AC 1 min.) V
Screw torques (Terminal / conscendens) 3 / 3 N·m
MG150Q2YS51 Toshiba GTR Module Pii N Channel IGBT (1 PER)