Datasheets:SI5906DUProduct Photos:PowerPAK ChipFet DualStandard Package: 1Category: Discrete Gallium ProductsFamily:FETs - ArraysSeries: TrenchFET®Packaging: Cut Tape (CT)FET Type:2 N-Channel (Dual) FET Pluma:GateDrain Logica Level ad Source voltage (Vdss):30VCurrent - Continuus Exhaurire (Id) @ 25° C:6ARds On (Max) @ Id, Vgs:31 mOhm @ 4.8A, 10VVgs(th) (Max) @ Id:2.2V @ 250µAGate Charge (Qg) @ Vgs:8.6nC @ 10VInput Capacitance (Ciss) @ Vds:300pF @ 15VPower - Max:10.4WMounting Type: Superface MountPackage / Case:PowerPAK® ChipFET #SI5906DU-T1-GE3 Vishay Siliconix SI5906DU-T1-GE3 Novae Potestatis Field-Effectus Gallium, 6A I (D), 30V, 0.031ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, HALOGEN LIBERI ET ROHS OBEDIENS, INDUCTUS, POWERPAK, CHIPFET-8, SI5906DU-T1-GE3 imagines, SI5906DU-T1-GE3 pretium, #SI5906DU-T1-GE3 elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Pars Number: SI5906DU-T1-GE3
Rohs Code: Sic
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: VISHAY SILICONIX
Sarcina Description: PAULLULUM FORMULA, R-XDSO-N6
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.96
Causa Connection: ELIX
Configurationis: SEPARATUS, 2 elementa inaedificata in Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 6 A
Exhaurire-fonte Resistentia-Max: 0.031 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-XDSO-N6
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Corpus sarcina Material: Omnes Diuini
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: PURUS MATTE TIN
Terminatio forma: n Plumbum
Terminatio Position: DUPLEX
Tempus
Potentia Field-Effectus Transistor, 6A I(D), 30V, 0.031ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, HALOGEN LIBERI ET ROHS OBEDIENS, INDUCTUS, POWERPAK, CHIPFET-8
Rohs Code: Sic
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: VISHAY SILICONIX
Sarcina Description: PAULLULUM FORMULA, R-XDSO-N6
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.96
Causa Connection: ELIX
Configurationis: SEPARATUS, 2 elementa inaedificata in Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 6 A
Exhaurire-fonte Resistentia-Max: 0.031 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-XDSO-N6
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Corpus sarcina Material: Omnes Diuini
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: PURUS MATTE TIN
Terminatio forma: n Plumbum
Terminatio Position: DUPLEX
Tempus
Potentia Field-Effectus Transistor, 6A I(D), 30V, 0.031ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, HALOGEN LIBERI ET ROHS OBEDIENS, INDUCTUS, POWERPAK, CHIPFET-8