The Mitsubishi QM75D1X-H is an IGBT module with specific features, applications, and maximum ratings. Here’s a breakdown of the provided information:
Features:
- N Channel, Enhancement Mode: This indicates that the IGBT operates in the enhancement mode and has an N-channel configuration. Enhancement mode IGBTs require a positive gate voltage to allow current flow between the collector and emitter terminals.
- Short Internal Connections: The design of the module includes short internal connections to prevent oscillations. This enhances the stability of the module during operation.
- Without Hard Mould: This suggests that the module doesn’t have a hard protective covering (mould) around its components. This choice might have environmental considerations or could make it easier to perform repairs or modifications.
- Isolated Copper Baseplate (DCB): The module uses Direct Copper Bonding Ceramic (DCB) technology for its baseplate, which offers good thermal conductivity and electrical isolation between components.
- All Electrical Connections on Top: All the electrical connections required for the module’s operation are located on the top side of the module. This makes it convenient for connecting busbars and other components.
Typical Applications: The module is suitable for a range of applications, including:
- Switched Mode Power Supplies: Used for efficient power conversion in various electronic devices.
- DC Servo and Robot Drives: In control systems for precise motion control.
- DC Choppers: Used in variable speed drives and motor control applications.
- Resonant and Welding Inverters: In power electronics systems for welding and resonant power conversion.
- AC Motor Drives: For controlling the speed and direction of AC motors.
- Laser Power Supplies: Used in laser equipment for power modulation and control.
- UPS Equipment: In uninterruptible power supply systems for backup power.
- Not Suitable for Linear Amplification: The module is not designed for linear amplification applications.
Maximum Ratings and Characteristics: These are the absolute maximum ratings and operating conditions for the module:
- Collector-Emitter Voltage (Vces): Maximum voltage that can be applied between the collector and emitter terminals: 600V.
- Gate-Emitter Voltage (VGES): Maximum voltage that can be applied between the gate and emitter terminals: ±20V.
- Collector Current (Ic): Maximum continuous collector current: 75A.
- Collector Current (Icp): Maximum pulse collector current (short duration): 200A.
- Collector Power Dissipation (Pc): Maximum power that can be dissipated by the collector: 180W.
- Collector-Emitter Voltage (VCES): Maximum collector-emitter voltage during turn-off: 2500V.
- Operating Junction Temperature (Tj): Maximum temperature at which the junction can operate: +150°C.
- Storage Temperature (Tstg): Temperature range for storing the module: -40 to +125°C.