The SLA36385A series has a 5 x 9mm footprint and 9.5mm height, and yet the components can handle up to 230A. Inductances range across 35 to 470nH. “The 35nH component can handle more than 200A, with approximately 20% roll off”, said the company. Resistance can be as low as 125μΩ and operational frequency as high […]
The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing or a cold-plate. It is expected to be used with a thermal interface pad to accommodate tolerance between PCB and […]
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Pondering future system-in-package designs that will consume around 1kW, Intel has used a 16nm finfet cmos process to created a prototype 52 phase buck converter that can be built into such ICs, which it revealed at the International Solid-State Circuit Conference in San Francisco. The point-of-load dc-dc takes in 2V and can deliver 200A (624A […]
Called AONA66916, thermal resistance form the junction to the top and bottom surfaces is 0.5 and 0.55C/W respectively. “The top-exposed DFN 5×6 package shares the same footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts,” said the company. On-resistance is 3.4mΩ, the gate is rated to ±20V and max junction temperature […]
the Fuji 2MBI200VB-120 IGBT Module, a powerful solution featuring: Ideal for various applications including: 2MBI200VB-120. IGBT Modules. IGBT MODULE (V series). 1200V / 200A / 2 in one package
Semikron’s SKM200GAL1200KL is a high-power, half-bridge IGBT power module, specifically crafted for diverse applications like industrial motor drives, renewable energy systems, and traction applications. Enclosed in the compact SEMITRANS 2 package, this module features two insulated gate bipolar transistors arranged in a half-bridge topology. With a robust design, it ensures maximum collector-emitter voltage of 1200V […]
The DF200AA160 is a power diode module meticulously engineered for the purpose of three-phase full-wave rectification. It incorporates six diodes interconnected in a three-phase bridge configuration. Notably, the module’s mounting base is electrically isolated from the semiconductor elements, simplifying the assembly of a heatsink. This versatile module can effectively handle an output DC current of […]
The MACMIC MMD200S160B is an IGBT (Insulated Gate Bipolar Transistor) module with certain features, applications, and maximum ratings. Here’s a breakdown of the provided information: Features: Applications: Maximum Ratings and Characteristics (at 25°C unless specified):