Semikron SKIM455GD12T4D1 IGBT Module
SKIM455GD12T4D1 IGBT Module: Technical Overview
The SKIM455GD12T4D1 is an insulated-gate bipolar transistor (IGBT) module, manufactured in a SKiM 5 package. Designed for demanding industrial power applications, this module features a compact housing with six IGBT switches in a “Six Pack” topology and advanced Trench IGBT 4 technology.
Key Technical Parameters
| Parameter | Value |
|---|---|
| Part Number | SKIM455GD12T4D1 |
| Housing Type | SKiM 5 (178 x 107 x 35 mm) |
| Switching Configuration | Six Pack |
| Technology | IGBT 4 (Trench) |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 450 A |
| Pulsed Collector Current (ICP) | 900 A |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Collector Power Dissipation (PC) | 1270 W |
| Maximum Junction Temperature (Tj) | +150°C |
| Storage Temperature (Tstg) | -40°C to +125°C |
| Mounting Screw Torque | 3.5 Nm × 1 |
Functional Applications
- Inverter systems for motor drive
- AC and DC servo drive amplifiers
- Uninterruptible power supplies (UPS)
Physical parameters include a package size of 178 mm (length) × 107 mm (width) × 35 mm (height). The SKIM455GD12T4D1 falls under the “Not for new designs” category, indicating continued use in established applications rather than recent developments.
For further technical information or documentation, visit the SKIM455GD12T4D1 product page.