Semikron’s SKM200GAL1200KL is a high-power, half-bridge IGBT power module, specifically crafted for diverse applications like industrial motor drives, renewable energy systems, and traction applications.
Enclosed in the compact SEMITRANS 2 package, this module features two insulated gate bipolar transistors arranged in a half-bridge topology. With a robust design, it ensures maximum collector-emitter voltage of 1200V and sustains continuous collector currents of up to 200A.
The SKM200GAL1200KL stands out for its remarkable characteristics, including a low on-state voltage drop, high short-circuit ruggedness, and minimal switching losses. These attributes are pivotal for achieving superior efficiency and reliability in power electronics systems.
Key Specifications of SKM200GAL1200KL:
- Product Status: Terminated SKM200GAL1200KL
- Housing: SEMITRANS 3 (106x62x31)
- Switches: Single Switch
- Dimensions (LLxBBxHH): 106x62x31
- Collector-Emitter Voltage (VCES): 1700V
- Continuous Collector Current (ICnom): 150A
- Technology: NPT IGBT (Standard)
While the product is no longer in active production, its SEMITRANS 2 package and advanced technological features make it a reliable choice for demanding applications. Explore its attributes for enhanced efficiency and performance in your power electronics projects.