Here are the features and maximum ratings/characteristics of the Semikron SKM500GA124DH6 IGBT module:
Features:
MOS input (voltage controlled): The module utilizes a mosfet-based input for voltage control.
N channel, homogeneous Si: The IGBTs in the module are of the N-channel type and made of homogeneous silicon.
Low inductance case: The module is designed with a low inductance case to minimize inductive effects during operation.
Very low tail current with low temperature dependence: The module exhibits low tail current, which refers to the small leakage current when the IGBT is in the off state. This current is also stable across a range of temperatures.
High short-circuit capability, self-limiting to 6 * 1 cnom: The module can handle high short-circuit currents, and the current is automatically limited to six times the nominal current (cnom).
Latch-up free: The module is designed to be latch-up free, meaning it is immune to latch-up phenomena that can occur in certain high-power devices.
Fast & soft CAL diodes: The module is equipped with fast and soft CAL (Co-Packaged Anti-Parallel) diodes, which are used to provide a low-resistance path for reverse current during switching.
Isolated copper baseplate using DBC Direct Copper Bonding Technology: The module incorporates an isolated copper baseplate that uses Direct Copper Bonding (DBC) technology. DBC provides excellent thermal conductivity and electrical isolation.
Large clearance (12 mm) and creepage distances (20 mm): The module has large clearance and creepage distances, which refer to the spacing between conductive parts to ensure proper insulation and prevent electrical arcing.
Typical Applications:
AC inverter drives: The module can be used in AC motor drives for controlling the speed and torque of electric motors.
UPS: It can be employed in uninterruptible power supplies (UPS) to ensure a continuous power supply during outages or fluctuations.
Maximum Ratings and Characteristics (Tc = 25°C unless otherwise specified):
Collector-Emitter voltage Vces: 1200V
Gate-Emitter voltage VGES: ±20V
Collector current IC: 500A
Collector current Icp: 1000A
Collector power dissipation Pc: 380W
Isolation Voltage VIsol (AC 1 minute): 2500V
Operating junction temperature Tj: +150°C
Storage temperature Tstg: -40 to +125°C
Mounting screw torque: 2.5 to 3.5 N·m
Weight: 330g