UnitedSiC has expanded its FET portfolio with six new 650V and 1200V options, all housed in the industry-standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150mOhm versions, these latest SiC FETs signify another step forward in accelerating migration to SiC over applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC-DC converters.
The devices support notably heightened switching speeds, with a Kelvin source connection increasing gate drive return performance, as well as providing industry-leading thermal capabilities. Through the use of Ag Sintering, die attachments can be done on conventional PCBs and complex insulated metal substrate arrangements. They also display excellent creepage and clearance figures of 6.7mm and 6.1mm respectively – indicating the highest degrees of operational safety can be ensured even at elevated voltages.
“Through the fast switching capabilities of these latest FETs, alongside the superior thermal performance resulting from Ag sintering, we continue to bring performance, reliability, size and layout benefits to the power designer,” states Anup Bhalla, VP Engineering at UnitedSiC.
The new devices are fully supported by the company’s FET-Jet Calculator. Using this free online resource, engineers can evaluate the different operational parameters required for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design needs quickly and with confidence.