SKM195GAL24DN: A Technical Analysis of a 2400V High-Voltage IGBT Module

SKM195GAL24DN | 2400V IGBT Module Technical Analysis

High-Voltage Performance in a Half-Bridge Configuration

The Semikron SKM195GAL24DN is a SEMITRANS® 2 half-bridge IGBT module engineered for high-voltage power conversion systems. Its core value proposition lies in the combination of a high 2400V collector-emitter blocking voltage with efficient Trench Gate IGBT technology, providing a robust foundation for demanding industrial applications. This module simplifies designs by integrating two IGBTs in a series configuration, a topology central to many inverters and converters.

• Core Specifications: 2400V | 150A | V_CE(sat) (typ.) = 3.6V
• Key Strengths: High blocking voltage for medium-voltage systems, integrated CAL freewheeling diodes for soft switching.

For engineers designing systems requiring high DC bus voltages, the 2400V rating offers a substantial safety margin against transient overvoltages.

Download the SKM195GAL24DN Official Datasheet (PDF)

Technical Analysis for System Design

The performance of the SKM195GAL24DN is rooted in its component technologies. The use of Trench Gate IGBTs creates a favorable balance between conduction and switching losses. The collector-emitter saturation voltage (V_CE(sat)) is a critical parameter, specified as 3.6V (typical) at its nominal current of 150A and a junction temperature of 25°C. You can think of V_CE(sat) as the electrical friction the device presents when it’s switched on; a lower value means less power is wasted as heat, directly contributing to higher system efficiency and potentially reducing heatsink requirements.

The module incorporates CAL (Controlled Axial Lifetime) freewheeling diodes. These diodes are optimized for soft recovery characteristics. A “soft” recovery means the diode turns off smoothly, minimizing voltage overshoots and high-frequency oscillations. This behavior is crucial for reducing electromagnetic interference (EMI), a key challenge in robust gate drive design and overall system compliance. The isolated copper baseplate ensures high thermal conductivity and simplifies mounting to a heatsink while maintaining electrical isolation.

Optimized Application Scenarios

The specific characteristics of this module make it well-suited for several high-power applications:

• Medium Voltage Converters: The 2400V rating is ideal for systems connected to higher voltage grids, providing the necessary voltage headroom for reliable operation.
• Industrial Motor Drives: Its 150A nominal current capacity can effectively control large AC motors, with the CAL diodes mitigating EMI that could interfere with control electronics.
• Renewable Energy Inverters: In solar or wind applications with high DC link voltages, the SKM195GAL24DN provides an efficient and robust switching stage.
• Auxiliary Power Supplies for Traction: The high voltage and rugged SEMITRANS package are suitable for the demanding electrical and mechanical environments found in railway systems.

This module is a strong match for systems where a high blocking voltage is a primary requirement, without compromising on switching efficiency and thermal performance.

Key Specification Parameters for SKM195GAL24DN

Parameter	Symbol	Value	Conditions
Absolute Maximum Ratings (Tcase = 25°C unless otherwise specified)
Collector-Emitter Voltage	VCES	2400 V	Tvj = 25°C
Continuous DC Collector Current	IC	187 A	Tcase = 25°C
Nominal Collector Current	ICnom	150 A	–
Repetitive Peak Collector Current	ICRM	300 A	tp = 1 ms
Total Power Dissipation	Ptot	1400 W	Tcase = 25°C
IGBT Characteristics (Tvj = 25°C / 125°C)
Collector-Emitter Saturation Voltage	VCE(sat)	3.6 V (typ) / 4.2 V (typ)	IC = 150 A, VGE = 15 V
Gate-Emitter Threshold Voltage	VGE(th)	5.8 V (typ)	IC = 6 mA
Turn-On Energy	Eon	160 mJ (typ)	IC = 150 A, VCE = 1200 V
Turn-Off Energy	Eoff	240 mJ (typ)	IC = 150 A, VCE = 1200 V
Thermal and Mechanical Characteristics
Thermal Resistance, Junction to Case	Rth(j-c)	0.089 K/W	per IGBT
Operating Junction Temperature	Tvj op	-40 to +150 °C
Isolation Test Voltage	Visol	4000 V	AC, 50 Hz, t = 1 min

Engineer’s FAQ

1. How does the 2400V rating benefit a medium-voltage drive design?
A 2400V V_CES provides a critical safety margin in systems with high DC bus voltages, such as 1500V DC-link inverters. It ensures the device can withstand voltage spikes caused by parasitic inductances during fast switching events, enhancing the overall reliability of the power semiconductors stage.

2. What is the recommended mounting procedure for the SEMITRANS 2 package to ensure proper thermal contact?
The datasheet specifies using a thermal interface material (TIM) with a recommended thickness and thermal conductivity. Mounting screws should be tightened with a torque of 5 Nm +/- 15%. Uneven or excessive torque can warp the baseplate, leading to poor thermal contact and potential device overheating. A proper IGBT thermal design is crucial for longevity.

3. What are the benefits of the integrated CAL freewheeling diode?
The CAL (Controlled Axial Lifetime) diode is engineered for soft recovery. This reduces voltage overshoots and oscillations (ringing) when the diode turns off. This characteristic is vital for lowering EMI and reducing the stress on the opposing IGBT in the half-bridge configuration, as explained in our guide to freewheeling diode performance.

4. Does the SKM195GAL24DN include an NTC thermistor?
No, the datasheet for this specific “GAL” version does not indicate the presence of an integrated NTC thermistor for temperature monitoring. Systems requiring temperature feedback would need to implement an external sensor near the module’s baseplate.

Design Enablement

The SKM195GAL24DN provides engineers with a high-voltage, half-bridge building block that balances performance and ruggedness. By integrating 2400V Trench Gate IGBTs with soft-recovery CAL diodes in an industry-standard package, it enables the development of more efficient and reliable power converters for industrial and renewable energy sectors.