Datasheets:SI5906DUProduct Photos:PowerPAK ChipFet DualStandard Package:1Category:Discrete Semiconductor ProductsFamily:FETs – ArraysSeries:TrenchFET®Packaging:Cut Tape (CT)FET Type:2 N-Channel (Dual)FET Feature:Logic Level GateDrain to Source voltage (Vdss):30VCurrent – Continuous Drain (Id) @ 25° C:6ARds On (Max) @ Id, Vgs:31 mOhm @ 4.8A, 10VVgs(th) (Max) @ Id:2.2V @ 250µAGate Charge (Qg) @ Vgs:8.6nC @ 10VInput Capacitance (Ciss) @ Vds:300pF @ 15VPower – Max:10.4WMounting Type:Surface MountPackage / Case:PowerPAK® ChipFET #SI5906DU-T1-GE3 Vishay Siliconix SI5906DU-T1-GE3 New Power Field-Effect Transistor, 6A I(D), 30V, 0.031ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8, SI5906DU-T1-GE3 pictures, SI5906DU-T1-GE3 price, #SI5906DU-T1-GE3 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: SI5906DU-T1-GE3
Rohs Code: Yes
Part Life Cycle Code: Transferred
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, R-XDSO-N6
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.96
Case Connection: DRAIN
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 6 A
Drain-source On Resistance-Max: 0.031 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-XDSO-N6
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 25 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
Terminal Form: NO LEAD
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 6A I(D), 30V, 0.031ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8
Rohs Code: Yes
Part Life Cycle Code: Transferred
Ihs Manufacturer: VISHAY SILICONIX
Package Description: SMALL OUTLINE, R-XDSO-N6
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.96
Case Connection: DRAIN
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 6 A
Drain-source On Resistance-Max: 0.031 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-XDSO-N6
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 25 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
Terminal Form: NO LEAD
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 6A I(D), 30V, 0.031ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8