#AP9477GK AP AP9477GK New Transistor 4.1 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power, AP9477GK pictures, AP9477GK price, #AP9477GK supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/ap9477gk.html
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Manufacturer Part Number: AP9477GK
Rohs Code: Yes
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: ADVANCED POWER ELECTRONICS CORP
Package Description: SMALL OUTLINE, R-PDSO-G4
Pin Count: 4
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Advanced Power Electronics Corp
Risk Rank: 5.69
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 60 V
Drain Current-Max (Abs) (ID): 4.1 A
Drain Current-Max (ID): 4.1 A
Drain-source On Resistance-Max: 0.09 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PDSO-G4
Moisture Sensitivity Level: 3
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 2.8 W
Pulsed Drain Current-Max (IDM): 20 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Powers
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Transistor 4.1 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
Rohs Code: Yes
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: ADVANCED POWER ELECTRONICS CORP
Package Description: SMALL OUTLINE, R-PDSO-G4
Pin Count: 4
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Advanced Power Electronics Corp
Risk Rank: 5.69
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 60 V
Drain Current-Max (Abs) (ID): 4.1 A
Drain Current-Max (ID): 4.1 A
Drain-source On Resistance-Max: 0.09 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PDSO-G4
Moisture Sensitivity Level: 3
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 2.8 W
Pulsed Drain Current-Max (IDM): 20 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Powers
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Transistor 4.1 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power