#AP9477GK AP AP9477GK New Gallium 4.1 A, 60 V, 0.09 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBSEQUENS FASCICULUS-4, FET Consilium generale Power, AP9477GK imagines, AP9477GK pretium, #AP9477GK elit
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/ap9477gk.html
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Manufacturer Pars Number: AP9477GK
Rohs Code: Sic
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G4
Pin Count: V
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Provectus potestatem Electronics Corp
Risk Rank: 5.69
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 4.1 A
Exhaurire Current-Max (ID): 4.1 A
Exhaurire-fonte Resistentia-Max: 0.09 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G4
Humorem sensitivum Level: 3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 2.8 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Propositum Potestates Generales
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Gallium 4.1 A, 60 V, 0.09 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS PACKAGE-4, FET General Propositum Power
Rohs Code: Sic
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G4
Pin Count: V
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Provectus potestatem Electronics Corp
Risk Rank: 5.69
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 4.1 A
Exhaurire Current-Max (ID): 4.1 A
Exhaurire-fonte Resistentia-Max: 0.09 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G4
Humorem sensitivum Level: 3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 2.8 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Propositum Potestates Generales
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Gallium 4.1 A, 60 V, 0.09 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS PACKAGE-4, FET General Propositum Power