#BSM35GD120DN2E3224 EUPEC BSM35GD120DN2E3224 New IGBT Modules N-CH 1.2KV 50A , BSM35GD120DN2E3224 pictures, BSM35GD120DN2E3224 price, #BSM35GD120DN2E3224 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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BSM35GD120DN2E3224
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Continuous Collector Current at 25 C: 50 A
Gate-Emitter Leakage Current: 150 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2
Packaging: Bulk
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 280 W
Factory Pack Quantity: 10
IGBT Modules N-CH 1.2KV 50A
Shunlongwei Inspected Every BSM35GD120DN2E3224 Before Ship, All BSM35GD120DN2E3224 with 6 months warranty.