The Infineon BSM50GP120 is an IGBT (Insulated Gate Bipolar Transistor) module. Here are some key specifications for this module:
Module Information:
- Part Number: BSM50GP120
- Package: 24EconoPIM3
- Configuration: Hex
- Pin Count: 24
- Maximum Collector-Emitter Voltage: 1200V
- Maximum Continuous Collector Current: 80A
- Maximum Gate-Emitter Voltage: ±20V
- Mounting: Screw
Manufacturer: Infineon
Category: IGBT Module
This module is designed for high-power applications where you need to control substantial voltage and current levels. Its 1200V maximum collector-emitter voltage and 80A maximum continuous collector current make it suitable for various industrial and power electronics applications.
The “24EconoPIM3” package indicates a specific package type for this module. The “Hex” configuration implies that it has a hexagonal shape, which might be relevant for mechanical considerations in your application.
Please note that when using IGBT modules like this one, it’s essential to refer to the manufacturer’s datasheet and guidelines for detailed electrical and thermal characteristics, as well as proper usage and mounting instructions.