Vishay VS-200MT160K IGBT Module

The Vishay VS-200MT160K is an IGBT (Insulated Gate Bipolar Transistor) module designed for power electronics applications. Here are some key features and specifications of this module:

Features:

  1. Package Compatibility: The module is fully compatible with the industry-standard INT-A-PAK power module series. This means it can be used as a drop-in replacement in systems designed for INT-A-PAK modules.
  2. High Thermal Conductivity: The package has high thermal conductivity, which helps dissipate heat efficiently. Efficient heat dissipation is crucial for the reliable operation of power electronics components.
  3. Electrically Insulated Case: The module’s case is electrically insulated, which is important for preventing electrical shorts and ensuring the safety of the device and operators.
  4. Low Power Loss: The module is designed for low power loss, which means it is efficient in converting electrical power into other forms without significant energy loss.
  5. Power Volume Ratio: It offers an excellent power volume ratio, which means it provides high power-handling capability in a relatively compact package. The outline of the module is designed for easy connections to power transistors and other IGBT modules.
  6. Isolating Voltage: It has a high isolating voltage of 1600 VRMS (Volts Root Mean Square), which helps ensure electrical isolation between different parts of the circuit.
  7. UL Approved: The module is UL E78996 approved, which indicates that it meets safety and performance standards set by Underwriters Laboratories (UL).
  8. Industrial Level: It is designed and qualified for industrial-level applications, which means it is suitable for use in demanding industrial environments.

Maximum Ratings and Characteristics:

  • Collector-Emitter Voltage (Vces): 1600V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Current (Ic): 200A
  • Collector Current (Icp, Peak): 400A
  • Collector Power Dissipation (Pc): 1270W
  • Collector-Emitter Voltage (VCES): 2500V (This is likely a breakdown voltage)
  • Operating Junction Temperature (Tj): +150°C
  • Storage Temperature (Tstg): -40 to +125°C
  • Mounting Screw Torque: 3.5 * 1 N·m

This module appears to be a robust and high-power IGBT module suitable for various industrial and power electronics applications, especially those requiring high voltage and current handling capabilities. Please note that these specifications are given at specific operating conditions (Tc=25°C), and the module’s performance may vary under different conditions. It’s essential to follow the manufacturer’s guidelines and datasheets when using such components in your designs.