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Manufacturer: Infineon Product Category: IGBT Modules RoHS: Yes Product: IGBT Silicon Modules Maximum Ratings and Characteristics: Absolute maximum ratings (Tc=25°C unless specified otherwise)
Collector-Emitter voltage: 1200 V (at Tvj = 25°C, VCES)
Continuous DC Collector Current: 50 A (TC = 100°C, Tvj max = 175°C, IC nom)
Repetitive Peak Collector Current: 100 A (tP = 1 ms, ICRM)
Total Power Dissipation: 270 W (TC = 25°C, Tvj max = 175°C, Ptot)
Gate-Emitter Peak voltage: ±20V (VGES)
Temperature under Switching Conditions: -40 to 150°C (Tvj op)
Gate Charge: 0.47 µC (VGE = -15V…+15V, QG), 400mA (IGES)
Collector-Emitter Cut Off Current: 5mA (VCE = 1200V, VGE = 0V, Tvj = 25°C, ICES)
Gate-Emitter Leakage Current: (VCE = 0V, VGE = 20V, Tvj = 25°C)
Mounting M5 Screw Torque: 3-6 N·m
Weight: 180g
Operating Temperature: -40 to 125°C (Tvj op)
Storage Temperature: -40 to 125°C (Tstg)