FS75R12KT3 IGBT module. Here is a summary of its key specifications:
- Product Category: IGBT Modules
- Manufacturer: Infineon
- Product: IGBT Silicon Modules
- Configuration: Hex
- Collector-Emitter Voltage (V<sub>CEO</sub>) Max: 1200 V
- Collector-Emitter Saturation Voltage: 2.15 V
- Continuous Collector Current at 25°C: 105 A
- Gate-Emitter Leakage Current: 400 nA
- Power Dissipation (P<sub>d</sub>): 355 W
- Package/Case: Econo 2
- Maximum Operating Temperature: +125°C
- Brand: Infineon Technologies
- Height: 17 mm
- Length: 107.5 mm
- Maximum Gate-Emitter Voltage: +/- 20 V
- Minimum Operating Temperature: -40°C
- Mounting Style: Screw
- Factory Pack Quantity: 10
- Width: 45 mm
This IGBT module is an N-channel device with a collector-emitter voltage (V<sub>CEO</sub>) of 1200 V and a maximum collector current of 105 A at 25°C. It is designed for various high-power applications and is known for its high voltage and current capabilities. The module has a hex configuration and is designed for easy mounting using screws. The Econo 2 package provides efficient heat dissipation, and it has a wide operating temperature range from -40°C to +125°C.