IOR IRF7473TR In-Stock

#IRF7473TR IOR IRF7473TR New Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8, IRF7473TR pictures, IRF7473TR price, #IRF7473TR supplier
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Manufacturer Part Number: IRF7473TR
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.17
Avalanche Energy Rating (Eas): 140 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 100 V
Drain Current-Max (ID): 6.9 A
Drain-source On Resistance-Max: 0.026 Ω
FET Technology: METAL-OXIDE Semiconductor
JEDEC-95 Code: MS-012AA
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e3
Moisture Sensitivity Level: 2
Number of Elements: 1
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 55 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: MATTE TIN
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8