FAIRCHILD SSW5N80A in-Stock

#SSW5N80A FAIRCHILD SSW5N80A Nova Power Field-effectus Gallium, 5A I (D), 800V, 2.2ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, D2PAK-3, SSW5N80A imagines, SSW5N80A pretium, #SSW5N80A elit.
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Manufacturer Pars Number: SSW5N80A
Rohs Code: No
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: FAIRCHILD Gallium SEGES
Sarcina Description: PAULLULUM FORMULA, R-PSSO-G2
Pin Count: V
Manufacturer: Fairchild Gallium Corporation
Risk Rank: 5.92
NIVIS NIVIS Energy Rating (Eas): 333 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 5 A
Exhaurire Current-Max (ID): 5 A
Exhaurire-fonte Resistentia-Max: 2.2 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PSSO-G2
JESD-609 Codex: e0
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 140 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: plumbum / plumbum (Sn / Pb)
Terminatio forma: CONCAVUM WING
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 5A I(D), 800V, 2.2ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, D2PAK-3