#FF300R12KT3 Infineon FF300R12KT3 Novum Trans IGBT Module N-CH 1.2KV 480A 7-pin 62MM-1 , FF300R12KT3 imagines, FF300R12KT3 pretium, #FF300R12KT3 supplementum
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Email: sales@shunlongwei.com
Email: sales@shunlongwei.com
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FF300R12KT3 Features
IGBT3 and Emitte Controlled High Efficiency diode 1200V 300A
Maximum ratings et habitudines,
.Absolute maximum ratings (T = sine nisi certa XXV ° C)
Kollektor-Emitter-Sperrspannung Collector-Emitter voltage TVj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuus DC collector currentis TC = 25°C, Tvj max = 175°C IC nom 300A
Accuratissima periodischerKollektor-Spitzenstrom repetita apicem collectoris currentis tP = 1 ms ICRM 600 A
Gesamt-Verlustleistung Summa potentiarum dissipationis TC = 25°C, Tvj max = 175°C Ptot 1450 W.
Porta-emitter-Spitzenspannung portam-emitter apicem voltage VGES±20 V
Temperatur in Schaltbetrieb Temperature sub conditionibus mutandis Tvj op -40~150 °C
Lagertemperatur at temperies Tstg -40~125 °C
Gewicht Pondus CCCXL g *
IGBT3 and Emitte Controlled High Efficiency diode 1200V 300A
Maximum ratings et habitudines,
.Absolute maximum ratings (T = sine nisi certa XXV ° C)
Kollektor-Emitter-Sperrspannung Collector-Emitter voltage TVj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuus DC collector currentis TC = 25°C, Tvj max = 175°C IC nom 300A
Accuratissima periodischerKollektor-Spitzenstrom repetita apicem collectoris currentis tP = 1 ms ICRM 600 A
Gesamt-Verlustleistung Summa potentiarum dissipationis TC = 25°C, Tvj max = 175°C Ptot 1450 W.
Porta-emitter-Spitzenspannung portam-emitter apicem voltage VGES±20 V
Temperatur in Schaltbetrieb Temperature sub conditionibus mutandis Tvj op -40~150 °C
Lagertemperatur at temperies Tstg -40~125 °C
Gewicht Pondus CCCXL g *