IR GA200HS60S In-Stock

#GA200HS60S IR GA200HS60S Nova GA200HS60S Portae Bipolaris Insulae Gallium, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11; GA200HS60S, GA200HS60S imagines, GA200HS60S pretium, #GA200HS60S elit.
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Manufacturer Pars Number: GA200HS60S
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: Infineon AG technologiae
Package Description: LABIUM operire montem, clangorque XUFM-R-X11
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.67
Additional Feature: DEIECTUS PRAEIUDICATUM
Si Connection, vagae
Current Bibliotheca-Max (Ic): A MCCC
Collector-Emitte voltage-Max: M V
Configurationis: SERIES CONIUNCTA, CENTRUM SPISSAMENTUM, ELEMENTA II
XXX-JESD Code: XUFM-R-X30
Elementa autem Number: I
Numerus terminales: VII
Corpus sarcina Material: Omnes Diuini
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Status absolute, non secundum quid
Campo monte: No such
Terminatio Form: Omnes Diuini
Terminatio Position: SUPERIOR
Tempus
Porta Bipolar Transistor insulata, 470A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11