#BSL802SNL6327 FILIO/INFINEON BSL802SNL6327 New Small Signum Field-Effect Gallium, 7.5AI(D), 20V, 1-Element, N-Channel, Silicon, oxydatum metallicum Gallium FET, GREEN, PLASTIC, TSOP-6, BSL802SNL6327 imagines, BSL802SNL6327 pretium, #BSL802SNL6327 elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/bsl802snl6327.html
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Manufacturer: Part Number: BSL802SNL6327
Pbfree Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Pars Package Code: TSOP
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G6
Pin Count: V
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.73
Additional Feature: AVALANCHE RATED, LOGICUS COMPATIBILE
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 7.5 A
Exhaurire Current-Max (ID): 7.5 A
Exhaurire-fonte Resistentia-Max: 0.022 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
Feedback Cap-Max (Crss): 77 pF
JESD-30 Codex: R-PDSO-G6
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
potestatem Dissipatio-Max (Abs): 2 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum campi-Effectus Transistor, 7.5AI(D), 20V, 1-Element, N-Channel, Silicon, oxydatum Metallicum FET semiconductor, VIRIDUM, PLASTICUM, TSOP-6.
Pbfree Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Pars Package Code: TSOP
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G6
Pin Count: V
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.73
Additional Feature: AVALANCHE RATED, LOGICUS COMPATIBILE
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 7.5 A
Exhaurire Current-Max (ID): 7.5 A
Exhaurire-fonte Resistentia-Max: 0.022 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
Feedback Cap-Max (Crss): 77 pF
JESD-30 Codex: R-PDSO-G6
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
potestatem Dissipatio-Max (Abs): 2 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum campi-Effectus Transistor, 7.5AI(D), 20V, 1-Element, N-Channel, Silicon, oxydatum Metallicum FET semiconductor, VIRIDUM, PLASTICUM, TSOP-6.