The Mitsubishi CM1000E4C-66R is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications and features:
- Maximum Collector Current (IC): 1000A
- Maximum Collector-Emitter voltage (VCES): 3300V
- Configuration: 1-element in a Pack (for brake chopper)
- Insulated Type: The module is designed with electrical insulation to ensure safe operation.
- LPT-IGBT / Soft Recovery Diode: It includes an IGBT with a Low Punch Through (LPT) design and a soft recovery diode for improved performance.
- AlSiC Baseplate: The module features an aluminum silicon carbide (AlSiC) baseplate, which provides good thermal conductivity and allows efficient heat dissipation.
Applications:
- Traction drives: The module can be used in traction drive systems, such as those in electric vehicles or trains.
- High Reliability Converters / Inverters: It is suitable for high-reliability converter and inverter applications, where consistent and efficient power conversion is required.
- DC choppers: The module can be used in DC chopper circuits, which control and regulate the output voltage in applications like motor drives.
Additional information:
- 4th-Version HVIGBT (High voltage Insulated Gate Bipolar Transistor) Modules: This indicates that the module is a fourth-generation high-voltage IGBT module, which likely incorporates advancements in performance and design compared to earlier versions.