MITSUBISHI MG400Q1US1 IGBT Module
MG400Q1US1 IGBT Module: Technical Overview
The MG400Q1US1 is a power transistor module based on N-channel IGBT technology.
Technical Specifications
| Parameter | Value |
|---|---|
| Model | MG400Q1US1 |
| Device Type | IGBT Module |
| Current Rating | 400 A |
| Voltage Rating | 1200 V |
| Configuration | N-channel |
| Weight | 1.10 lbs (0.5 kg) |
The module packaging has a compact footprint, supporting integration into high-power conversion circuits.
Application Areas
- High-power switching circuits
- Industrial motor drives
- Inverter systems
- Static power supplies
For additional information about IGBT modules and their application in motor control, refer to the SLW Electronics IGBT overview.
Features
- High current capacity up to 400 A
- Operational voltage rating of 1200 V
- Optimized for applications with high power density
- N-channel architecture aimed at efficient switching performance
Clearly defined pinouts allow easier PCB integration for power electronics applications.
The device supports robust mounting with good thermal conductivity for efficient heat dissipation.
For a detailed product datasheet and availability, visit the MG400Q1US1 product page.