SAMSUNG K4R761869A-GCT9 In-Stock

#K4R761869A-GCT9 SAMSUNG K4R761869A-GCT9 New Rambus DRAM, 32MX18, 32ns, CMOS, PBGA92, K4R761869A-GCT9 pictures, K4R761869A-GCT9 price, #K4R761869A-GCT9 supplier
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Manufacturer Part Number: K4R761869A-GCT9
Pbfree Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG Semiconductor INC
Package Description: FBGA, BGA92,10X18,32
Manufacturer: Samsung Semiconductor
Risk Rank: 5.81
Access Time-Max: 32 ns
I/O Type: COMMON
JESD-30 Code: R-PBGA-B92
JESD-609 Code: e1
Memory Density: 603979776 bit
Memory IC Type: RAMBUS DRAM
Memory Width: 18
Moisture Sensitivity Level: 3
Number of Terminals: 92
Number of Words: 33554432 words
Number of Words Code: 32000000
Organization: 32MX18
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA92,10X18,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel): 260
Power Supplies: 1.8/2.5,2.5 V
Qualification Status: Not Qualified
Subcategory: DRAMs
Surface Mount: YES
Technology: CMOS
Terminal Finish: TIN SILVER COPPER
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Time
Rambus DRAM, 32MX18, 32ns, CMOS, PBGA92