The Semikron SEMiX353GB126V1 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. Here are the features and specifications of the module:
Features:
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
Typical Applications:
- AC inverter drives
- UPS (Uninterruptible Power Supply)
- Renewable energy systems
Remarks:
- Product reliability results are valid for Tj=150°C (Junction Temperature)
- Visol (Isolation voltage) between temperature sensor and power section is only 2500V
- For storage and case temperature with TIM (Thermal Interface Material), refer to document “TP(*) SEMiX 3p”
Maximum Ratings and Characteristics:
- Absolute maximum ratings (Tc=25°C unless specified otherwise)
- Mounting screw torque: 3.5 *1 N·m (Newton meter)
Weight: 350g
These specifications provide information about the module’s voltage, current, power dissipation, temperature ratings, mounting screw torque, weight, and other relevant details.