The SEMIKRON SKM400GAR12T4D is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for industrial applications requiring high voltage and current handling capabilities. Here are the details of the module:
- Function: It operates as a power electronic switch and amplifier, commonly used in motor drives, renewable energy systems, welding equipment, and other high-power industrial applications.
- Voltage and Current Ratings: The module has a maximum voltage rating of 1,200 volts and can handle continuous currents of up to 400 amperes.
- Configuration: The module comprises four IGBTs (Insulated Gate Bipolar Transistors) and four free-wheeling diodes. It is configured in a half-bridge setup.
- Protection Features: The SKM400GAR12T4D module is equipped with integrated temperature and overcurrent protection, helping to ensure safe and reliable operation under various conditions.
- Technology:
- It features high-speed trench and field-stop IGBT technology, which allows for efficient switching and reduced power losses.
- The module includes the CAL4 ultra-fast soft switching generation CAL-diode for improved performance.
- Baseplate Technology: The module employs an insulated copper baseplate using DBC technology (Direct Bonded Copper), aiding in efficient heat dissipation.
- Switching Frequencies: It is designed for higher switching frequencies above 15kHz, making it suitable for applications requiring rapid switching.
- Applications: Typical uses include electronic welders, DC/DC converters, and switched reluctance motors, among others.
- Maximum Ratings and Characteristics:
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 400A (800A for short durations)
- Collector-Emitter Voltage (VCES): 4000V (for transients)
- Operating Junction Temperature (Tj): Up to +150°C
- Storage Temperature (Tstg): Ranging from -40°C to +125°C
- Mounting and Weight: The module is mounted using an M5 screw with a torque of 2.5~5 N·m. Its weight is typically around 325g.