BussMan FWH-400A FUSE Features: General Information: Voltage Rating: Maximum Ratings and Characteristics (Tc=25°C unless specified): Consultation:
Rohde & Schwarz has introduced 5GHz instantaneous bandwidth front-ends for its automotive radar test set-up. “From the automotive radar perspective, a higher instantaneous bandwidth improves the distance resolution,” the company said. AREG8-81WS (monostatic – single antenna) and AREG8-81WD (bistatic – dual antenna) are for the 76 to 81GHz band and are updates on the 4GHz […]
Part Number: 2MBI300S-120 Description: 1200V / 300A 2 in one-package (This indicates the module’s maximum collector-emitter voltage and collector current capacity.) Target Applications: Features: Applications: Maximum Ratings and Characteristics: The absolute maximum ratings for this module (at a junction temperature of 25°C unless otherwise specified) are as follows: The 2MBI300S-120 is designed for applications that […]
The Infineon FF800R17KE3 is an IGBT (Insulated Gate Bipolar Transistor) module. Below are the details about this module:
The SEMIKRON SKM400GAR12T4D is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for industrial applications requiring high voltage and current handling capabilities. Here are the details of the module:
With the 1,200 V TRENCHSTOP™ IGBT7 chips, Infineon Technologies delivers a 62mm half-bridge and common emitter module portfolio. The new 800A maximum current class for the package family broadens the variety of options in the tried-and-true 62 mm housing. The addition to the portfolio’s existing classes gives system designers a lot of creative freedom when […]
The Infineon FF400R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. It comes with specific maximum ratings and characteristics that make it suitable for various industrial and power control applications. Here are the key specifications and features of the FF400R06KE3 IGBT module: Maximum Ratings and Characteristics: The FF400R06KE3 IGBT module […]
the Infineon #FZ400R17KE3 is essential for proper usage and to prevent damage or failure. Let’s go through each of the maximum ratings and characteristics of this component:
The applicable category for the IGBT-module 1MBI800U4B-120 is “Power Semiconductor Module” or “IGBT Module.”The key specifications and storage/transportation notes for the module:Collector-Emitter Voltage (VCE): 1200VGate-Emitter Voltage (VGES): ±20V (at Tc = 25°C)Continuous Collector Current (IC): 800A (at Tc = 80°C)Pulse Collector Current (ICP): 2400A (1 ms, at Tc = 25°C)Collector Power Dissipation (Pc): 4805WJunction Temperature […]