Toshiba Electronics Europe GmbH has developed a new 2200V rated SiC MOSFET with embedded SBD for use in 1500VDC applications such as PV inverters, EV chargers, high-frequency DC-DC converters and energy storage systems. The new device simplifies inverter designs and increases power density, decreasing size and weight. Conventional three-level inverters display low switching losses as […]
Conventional three-level inverters exhibit low switching losses as the off-state voltage across switching devices is half the line voltage. In comparison, two-level inverters have fewer switching modules making them simpler, smaller, and lighter. However, they require semiconductor devices with higher breakdown voltage, as the applied voltage is the line voltage. Meeting this challenge is important […]
The ST STE07DE220 is an IGBT (Insulated Gate Bipolar Transistor) module with specific features, applications, and maximum ratings. Here’s the information you provided: Features: Applications: Description: The STE07DE220 is manufactured using a hybrid structure, combining high voltage Bipolar and low voltage MOSFET technologies. This hybrid design aims to provide optimal performance in ESBT (Emitter-Switched Bipolar […]
The Mitsubishi BKO-NC1122-H03 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric. Here are the maximum ratings and characteristics of this module: Model: BKO-NC1122-H03 Absolute Maximum Ratings (Tc=25°C unless otherwise specified): This IGBT module is rated for a maximum collector-emitter voltage of 600V and a maximum collector current of 150A. It has […]
The Mitsubishi CM1200HC-66H is an IGBT module with the following features: Here are the maximum ratings and characteristics of the module: Additionally, here are some electrical characteristics of the module: The module has a mounting torque of M6 (mounting screw) and weighs approximately 1.5kg.
Infineon DDB6U215N16L IGBT Module – High-Current Bridge Rectifier Diode The Infineon DDB6U215N16L is a high-performance IGBT module that incorporates a bridge configuration with six elements. Key specifications of the DDB6U215N16L module include: Manufacturer Part Number: DDB6U215N16LPbfree Code: Yes (Lead-free)Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99 (Export Administration Regulations 99)Configuration: Bridge, 6 ElementsDiode Type: Bridge Rectifier DiodeForward […]