The Mitsubishi QM75DY-H is an IGBT module with the following specifications and features: Specifications: Absolute Maximum Ratings (Tj=25°C, unless otherwise noted): Features: The Mitsubishi QM75DY-H IGBT module is designed for medium-power switching applications and offers a collector current of 75A and a collector-emitter voltage of 1000V. It is insulated for safety and reliability in various […]
This demonstrates the suitability of Weebit ReRAM for use in MCUs and other automotive components, as well as high-temperature industrial and IoT applications. The qualification, using Weebit’s demo chips manufactured by its R&D partner CEA-Leti, was performed based on well-known JEDEC industry standards for NVMs. These standards require the testing of many silicon dies blindly […]
The EVL32-060 is Fuji IGBT module. Here are the updated specifications for the Fuji EVL32-060 IGBT module:Manufacturer: Fuji ElectricModel: EVL32-060Type: IGBT ModuleCollector-Emitter voltage Vces: 1200VGate-Emitter voltage VGES: ±20VCollector current IC Continuous Tc=25°C: 600ACollector current ICP 1ms Tc=25°C: 1200AIsolation Voltage VIsol (AC 1 minute): 2500VOperating junction temperature Tj: +150°CStorage temperature Tstg: -40 to +125°CThe Fuji EVL32-060 […]
The Fuji 2DI200D-100 IGBT module high power device designed for various applications in industrial systems.Description:The 2DI200D-100 dual IGBT module that combines two IGBTs in single package. It is designed for high-speed switching applications, offering low saturation voltage and voltage drive capabilities. The module is commonly used in motor drives, servo amplifiers, uninterruptible power supplies (UPS), […]
The Toshiba MG100J6ES50 is a high-power silicon N-channel IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching and motor control applications. Here are the features and specifications of the module: These specifications indicate that the Toshiba MG100J6ES50 module is suitable for applications requiring high-power switching and motor control. It offers high-speed operation, low saturation […]
The Toshiba MG25Q6ES42 is an IGBT (Insulated Gate Bipolar Transistor) module produced by Toshiba Corporation. Here are some details about this particular module:
“In view of the above shortcomings of the traditional multi-level topology, this paper proposes a new asymmetric hybrid multi-level inverter structure. By controlling the number of power supplies at the input end, different levels can be obtained, and up to six outputs can be obtained. level, while reducing the device and the DC voltage source, […]
The Toshiba MG200Q2YS50 is an IGBT (Insulated Gate Bipolar Transistor) module designed to enhance the performance of high-power switching applications. Here are some key features and specifications of the MG200Q2YS50: The MG200Q2YS50 is specifically designed for high-power switching and motor control applications. It provides a reliable and efficient solution with its high current and voltage […]
The Toshiba MG100J7CSAOA is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching and motor control applications. Here are the specifications and ratings for this module: