The Toshiba MG200Q2YS50 is an IGBT (Insulated Gate Bipolar Transistor) module designed to enhance the performance of high-power switching applications. Here are some key features and specifications of the MG200Q2YS50:
- Maximum collector current: 200A
- Collector-emitter voltage: 1200V
- Complete half bridge configuration in one package
- Electrodes are isolated from the case
- Low power dissipation for improved efficiency
- Classified as a Generic Transient Recorder, offering support for various transient recorders
- Suitable for DC motor controls, allowing the full potential of motor control applications
- Convenient installation with built-in diode and flange mounting device
- Improved operational speed and reliability with a designed reverse recovery time
The MG200Q2YS50 is specifically designed for high-power switching and motor control applications. It provides a reliable and efficient solution with its high current and voltage ratings. T