The Semikron SKiiP83ANB15T5 is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications: Additionally, the module is described as an IGBT with a voltage rating of 1200V and a current rating of 125A.
Model: 32NAB125T12Features:Specification of temperature sensorCommon characteristicsOptions:The option for faster IGBTs is available.Maximum Ratings and Characteristics (Tc=25°C unless otherwise specified):Collector-Emitter voltage (Vces): 600VGate-Emitter voltage (VGES): ±20VCollector current (IC): 50ACollector current (Icp): 100ACollector-Emitter voltage (VCES): 2500VOperating junction temperature (Tj): +150°CStorage temperature (Tstg): -40 to +125°CMounting M5 screw torque: 2.0~2.5 N·m
The Fuji 7MBR35U4P120 is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications: Features: Applications: Maximum Ratings: The module is designed with a low VCE(sat) characteristic, making it suitable for high-efficiency applications. It has a compact package and can be mounted on a printed circuit board (P.C.Board). The module also includes a converter […]
The Semikron SEMiX353GB126V1 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. Here are the features and specifications of the module: Features: Typical Applications: Remarks: Maximum Ratings and Characteristics: Weight: 350g These specifications provide information about the module’s voltage, current, power dissipation, temperature ratings, mounting screw torque, weight, and other relevant details.
the specifications and features of the Semikron SKiiP 13AC12T4V1 IGBT module. Here is a breakdown of the information: Module Model: SKiiP 13AC12T4V1 Features: Typical Applications: Maximum Ratings and Characteristics (at Tc=25°C unless otherwise specified): The Semikron SKiiP 13AC12T4V1 IGBT module is designed for various applications, particularly in inverters and motor control systems. It features four […]
The information you provided describes the specifications and features of the NIEC PDH6016 IGBT module. Here is a breakdown of the information: Manufacturer Part Number: PDH6016 Part Life Cycle Code: Active Package Description: MODULE-6 HTS Code: 8541.30.00.80 Manufacturer: KYOCERA Corporation Additional Feature: UL RECOGNIZED Case Connection: ISOLATED Configuration: SINGLE WITH BUILT-IN DIODE DC Gate Trigger […]
The SKIIP83EC125T1 IGBT module by Semikron has the following features and specifications:Features:. High power density design. Integrated IGBTs and freewheeling diodes. Built-in gate drive circuitry. Low inductance and low thermal resistance. High short-circuit capability. Robust and reliable construction. Designed for easy installation and maintenance. Low VCE(sat): The module is designed with low saturation voltage to […]
The FS150R12KT4 is a power Semiconductor module produced by Infineon Technologies. It is a 1200V IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. Here are some key features and specifications of the FS150R12KT4: Features:High switching speedLow collector-emitter saturation voltage (VCE(sat))Low inductance module designCompact and durable packageHigh power densityApplications:Inverters for motor drivesAC and DC […]
The FP40R12KE3 is a power module manufactured by Infineon Technologies. It is part of the IGBT (Insulated Gate Bipolar Transistor) module series and is designed for high-power switching applications. Here are the specifications for the FP40R12KE3: Module Type: IGBT Power ModuleModel Number: FP40R12KE3Manufacturer: Infineon Technologiesvoltage Rating: 1200VCurrent Rating: 40AConfiguration: Dual IGBTs and freewheeling diodes in […]