The Toshiba MG200H1AL2 is a robust IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. Here’s a concise overview of its key features and specifications:
Description: The MG200H1AL2 is a transistor module with a current rating of 200 Amps and a voltage rating of 450 Volts. It weighs 210 grams (approximately 0.46 lbs), making it suitable for applications that require high power and voltage handling.
Target Applications: The MG200H1AL2 module is well-suited for:
- High Power Switching Applications
- Motor Control Applications
Features:
- NPN Si Power Transistor: Features NPN (Negative-Positive-Negative) configuration and utilizes silicon (Si) technology, making it suitable for high-power applications.
Maximum Ratings and Characteristics (Tc=25°C unless specified):
- Collector-Emitter Voltage (Vces): 600V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 200A
- Peak Collector Current (Icp): 400A
- Collector Power Dissipation (Pc): 800W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 2.0/3.5 *1 N·m
Module Type:
- IGBT Module: Designed as an IGBT module with a current rating of 200A and a voltage rating of 450V.
The Toshiba MG200H1AL2 IGBT module offers high power handling capabilities and is designed to withstand demanding applications in power electronics. Its voltage and current ratings, along with its NPN Si power transistor configuration, make it suitable for various high-power switching tasks, including motor control and other power management applications. With its robust design and efficient performance, this module serves as a reliable solution for industrial and commercial applications that require precise control of high-power systems.