Unisonic Technologies Co Ltd 12N10G-TN3-R In-Stock
#12N10G-TN3-R Unisonic Technologies Co Ltd 12N10G-TN3-R New Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,, 12N10G-TN3-R pictures, 12N10G-TN3-R price, #12N10G-TN3-R supplier
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Email: [email protected]
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Email: [email protected]
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Manufacturer Part Number: NoLOGIES CO LTD
Package Description: Nologies Co Ltd
Risk Rank: Nology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 30 W
Pulsed Drain Current-Max (IDM): 48 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Package Description: Nologies Co Ltd
Risk Rank: Nology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 30 W
Pulsed Drain Current-Max (IDM): 48 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,